N-face $(000\bar{1})$ GaN/InN/GaN double heterostructures emitting near-infrared photoluminescence grown by metalorganic vapor phase epitaxy
Author:
Funder
Japan Society for the Promotion of Science
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=8/a=081001/pdf
Reference40 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Electron mobilities in gallium, indium, and aluminum nitrides
3. Unusual properties of the fundamental band gap of InN
4. Optical bandgap energy of wurtzite InN
5. Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
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1. Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD;Coatings;2020-12-04
2. Fabrication of a thermostable Ga-face GaN template on a molybdenum substrate via layer transfer;Optical Materials Express;2020-09-11
3. Study on Preparation and Properties of InN Films on Self-Supporting Diamond Substrates Under Different Nitrogen Flows;Frontiers in Materials;2020-06-10
4. Low-temperature chemical synthesis of nanostructured indium nitride from indium hydroxide;Journal of the Ceramic Society of Japan;2020-01-01
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