Single-crystalline InN films with an absorption edge between 0.7 and 2 eV grown using different techniques and evidence of the actual band gap energy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632038
Reference10 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Fundamental absorption edge in GaN, InN and their alloys
3. Optical band gap of indium nitride
4. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)
5. Unusual properties of the fundamental band gap of InN
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