InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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InN/InGaN multiple quantum wells emitting at 1.5 μm grown by molecular beam epitaxy

Published:2011-02-07 Issue:6 Volume:98 Page:061901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Grandal J.,Pereiro J.,Bengoechea-Encabo A.,Fernández-Garrido S.,Sánchez-García M. A.,Muñoz E.,Calleja E.,Luna E.,Trampert A.

Funder

Spanish Ministry of Science and Innovation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3552195

Reference17 articles.

1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

2. Low-field electron mobility in wurtzite InN

3. Evidence forp-Type Doping of InN

4. Fine-structure N-polarity InN∕InGaN multiple quantum wells grown on GaN underlayer by molecular-beam epitaxy

5. Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix

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