Growth of high‐quality hexagonal InN on 3C‐SiC (001) by molecular beam epitaxy
Author:
Affiliation:
1. Department of Electrical and Electronic Systems, Faculty of Engineering, Saitama University, 255 Shimo‐Okubo, Sakura‐ku, Saitama‐shi, 338‐8570, Japan
2. CREST, JST, 4‐1‐8 Hon‐cho, Kawaguchi‐shi, Saitama 332‐0012, Japan
Publisher
Wiley
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.200461386
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Elucidating the Optical Properties of Novel Heterolayered Materials Based on MoTe2–InN for Photovoltaic Applications;The Journal of Physical Chemistry C;2015-05-13
2. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy;Applied Physics Letters;2014-08-11
3. Recent advances in the MOVPE growth of indium nitride;physica status solidi (a);2009-12-10
4. Theoretical investigation on structural stability of InN thin films on 3C–SiC(001);Applied Surface Science;2008-09
5. Photoluminescence study of hexagonal InN/InGaN quantum well structures grown on 3C-SiC (001) substrates by molecular beam epitaxy;physica status solidi (c);2008-05
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