Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE-Reference-Cited by-同舟云学术

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Epitaxial lateral overgrowth of a-AlN layer on patterned a-AlN template by HT-MOVPE

Published:2007-03 Issue:1 Volume:300 Page:141-144
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Okada N.,Kato N.,Sato S.,Sumii T.,Fujimoto N.,Imura M.,Balakrishnan K.,Iwaya M.,Kamiyama S.,Amano H.,Akasaki I.,Takagi T.,Noro T.,Bandoh A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Control of p-Type Conduction in a-Plane GaN Grown on Sapphire r-Plane Substrate

3. Epitaxy of nonpolar AlN on 4H-SiC (1-100) substrates

4. AlN epitaxial growth on off-angle R-plane sapphire substrates by MOCVD

5. Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth

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1. Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy;Materials;2024-01-09

2. Improved crystallinity and surface morphology of a-plane AlN grown on high temperature annealed AlN/sapphire template by pulsed-flow mode metal-organic vapor phase epitaxy;Semiconductor Science and Technology;2023-05-05

3. The stacking fault annihilation in a-plane AlN during high-temperature annealing;CrystEngComm;2023

4. Effects of nitrogen flux and RF sputtering power on the preparation of crystalline a-plane AlN films on r-plane sapphire substrates;Semiconductor Science and Technology;2022-11-11

5. Investigation of off-cut angle of sapphire for epitaxial lateral overgrowth of AlN and fabrication of high-quality AlN template;Journal of Crystal Growth;2022-06

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