Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film-Reference-Cited by-同舟云学术

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Ammonolysis of Ga2O3 and its application to the sublimation source for the growth of GaN film

Published:2004-03 Issue:1-3 Volume:264 Page:1-6
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Park Y.J,Oh C.S,Yeom T.H,Yu Y.M

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference13 articles.

1. The Blue Laser Diode;Nakamura,2000

2. Band structure ofInxGa1−xAs1−yNyalloys and effects of pressure

3. A Benzene-Thermal Synthetic Route to Nanocrystalline GaN

4. Synthesis and structure of nanocrystal-assembled bulk GaN

5. Influence of Precursor Route on the Photoluminescence of Bulk Nanocrystalline Gallium Nitride

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Eu Activation inβ-Ga2O3MOVPE Thin Films by Ion Implantation;ECS Journal of Solid State Science and Technology;2019

2. Formation of GaN thin film on silicon substrate by gallium oxide ammoniation;Optik;2018-10

3. Kinetic Monte Carlo Simulation of Au Monolayer Evolution on Cu(110);physica status solidi (b);2018-09-19

4. A review of Ga2O3materials, processing, and devices;Applied Physics Reviews;2018-03

5. Hexagonal GaN films with micron thickness fabricated by nitridation of Mg doped β-Ga2O3crystals;Selected Papers of the Photoelectronic Technology Committee Conferences held November 2015;2016-01-26

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