A Benzene-Thermal Synthetic Route to Nanocrystalline GaN-Reference-Cited by-同舟云学术

A Benzene-Thermal Synthetic Route to Nanocrystalline GaN

Published:1996-06-28 Issue:5270 Volume:272 Page:1926-1927
ISSN:0036-8075
Container-title:Science
language:en
Short-container-title:Science

Author:

Xie Yi¹,Qian Yitai¹,Wang Wenzhong²,Zhang Shuyuan³,Zhang Yuheng³

Affiliation:

1. Y. Xie and Y. Qian, Structure Research Laboratory and Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

2. W. Wang, Department of Applied Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

3. S. Zhang and Y. Zhang, Structure Research Laboratory, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China.

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

Reference20 articles.

1. ON THE PREPARATION OF THE NITRIDES OF ALUMINUM AND GALLIUM;ADDAMIANO A;JOURNAL OF THE ELECTROCHEMICAL SOCIETY,1961

2. GROWTH OF GAN THIN-FILMS FROM TRIETHYLGALLIUM MONAMINE;ANDREWS J.E.;JOURNAL OF THE ELECTROCHEMICAL SOCIETY,1975

3. BAILER J.C., INORGANIC SYNTHESES 4, 1 (1955).

4. BOOTH H.S., INORGANIC SYNTHESES 1, 26 (1939).

5. STIMULATED EMISSION AND LASER ACTION IN GALLIUM NITRIDE;DINGLE R;APPLIED PHYSICS LETTERS,1971

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