Simulations of dislocation density in silicon carbide crystals grown by the PVT-method
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Study of effects of varying parameters on the dislocation density in 200 mm SiC bulk growth;Journal of Crystal Growth;2024-02
2. Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method via Simulations;Crystals;2023-11-26
3. Effect of crucible thermal conductivity on dislocation distribution in crystals in a silicon carbide physical vapor transport furnace;Journal of Crystal Growth;2023-02
4. Numerical analysis of the dislocation density in n-type 4H-SiC;CrystEngComm;2023
5. Numerical Analysis of Dislocation Density of SiC Crystals Tilted from [0001] Toward [12¯10]$[ {1\bar 210} ]$ and [11¯00]$[ {1\bar 100} ]$ Grown by Physical Vapor Transport;Crystal Research and Technology;2022-01-20
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