Optimization of sublimation growth of SiC bulk crystals using modeling-Reference-Cited by-同舟云学术

Optimization of sublimation growth of SiC bulk crystals using modeling

Published:1999-07 Issue: Volume:61-62 Page:107-112
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Ramm M.S,Mokhov E.N,Demina S.E,Ramm M.G,Roenkov A.D,Vodakov Yu.A,Segal A.S,Vorob’ev A.N,Karpov S.Yu,Kulik A.V,Makarov Yu.N

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference3 articles.

1. Proceedings of the ICSCIII-N’97;Egorov,1998

2. A.S. Segal, A.N. Vorob’ev, S.Yu. Karpov, Yu.N. Makarov, E.N. Mokhov, M.G. Ramm, M.S. Ramm, A.D. Roenkov, Yu.A. Vodakov, A.I. Zhmakin. Mater. Sci. Eng. B (in press).

3. Use of Ta-Container for Sublimation Growth and Doping of SiC Bulk Crystals and Epitaxial Layers

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