Author:
Miyazaki Kazuma,Nakano Satoshi,Nishizawa Shin-ichi,Kakimoto Koichi
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review
2. A.R Powell, R.L Leonard, Y. Khlebnikov, E. Deyneka, M. Mckay, J.J. Sumakeris, V. Tsvetkov, E Balkas, Abstracts of international conference on silicon carbide and related materials 2013; September 29−October 4, 2013, Miyazaki, Japan; The Japan Society of Applied Physics: Tokyo, Japan.
3. Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method
4. Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model
5. Simulations of dislocation density in silicon carbide crystals grown by the PVT-method