Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method
Author:
Affiliation:
1. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/cg401789g
Reference20 articles.
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3. Powell, A. R.; Leonard, R. L.; Khlebnikov, Y.; Deyneka, E.; Mckay, M.; Sumakeris, J. J.; Tsvetkov, V.; Balkas, E.Abstracts of International Conference on Silicon Carbide and Related Materials 2013; September 29–October 4, 2013, Miyazaki, Japan;The Japan Society of Applied Physics:Tokyo, Japan, 2013; No.91.
4. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
5. Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model
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