Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method-Reference-Cited by-同舟云学术

Three-Dimensional Modeling of Basal Plane Dislocations in 4H-SiC Single Crystals Grown by the Physical Vapor Transport Method

Published:2014-01-29 Issue:3 Volume:14 Page:1272-1278
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Gao Bing¹,Kakimoto Koichi¹

Affiliation:

1. Research Institute for Applied Mechanics, Kyushu University, Kasuga, Fukuoka 816-8580, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg401789g

Reference20 articles.

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3. Powell, A. R.; Leonard, R. L.; Khlebnikov, Y.; Deyneka, E.; Mckay, M.; Sumakeris, J. J.; Tsvetkov, V.; Balkas, E.Abstracts of International Conference on Silicon Carbide and Related Materials 2013; September 29–October 4, 2013, Miyazaki, Japan;The Japan Society of Applied Physics:Tokyo, Japan, 2013; No.91.

4. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes

5. Dislocation-density-based modeling of the plastic behavior of 4H–SiC single crystals using the Alexander–Haasen model

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