Numerical analysis of the dislocation density in n-type 4H-SiC-Reference-Cited by-同舟云学术

Numerical analysis of the dislocation density in n-type 4H-SiC

Published:2023 Issue:26 Volume:25 Page:3718-3725
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lu Sheng'ou¹²^ORCID,Chen Hongyu¹,Hang Wei¹,Wang Rong³²^ORCID,Yuan Julong¹,Pi Xiaodong³²^ORCID,Yang Deren³²^ORCID,Han Xuefeng³²

Affiliation:

1. Ultra-precision Machining Research Center, Zhejiang University of Technology, Hangzhou 310023, China

2. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University, Hangzhou, Zhejiang 310027, China

3. State Key Laboratory of Silicon Materials & School of Materials Science and Engineering, Zhejiang University, Hangzhou 311200, China

Abstract

Effective stress! By comparing the calculation and experimental results, a possible value of effective stress to evaluate the effect of nitrogen dopant on dislocation density is proposed.

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2023/CE/D3CE00219E

Reference18 articles.

1. Review of Silicon Carbide Power Devices and Their Applications

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3. Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements

4. T.Kimoto and J. A.Cooper , Fundamentals of silicon carbide technology: growth, characterization, devices and applications , John Wiley & Sons , 2014 , pp. 11–38

5. Zur plastischen Verformung von Germanium und InSb

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