The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition-Reference-Cited by-同舟云学术

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The growth of low resistivity, heavily Al-doped 4H–SiC thick epilayers by hot-wall chemical vapor deposition

Published:2013-10 Issue: Volume:380 Page:85-92
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ji Shiyang,Kojima Kazutoshi,Ishida Yuuki,Saito Shingo,Kato Tomohisa,Tsuchida Hidekazu,Yoshida Sadafumi,Okumura Hajime

Funder

Japan Society for the Promotion of Science

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Design and technology considerations for SiC bipolar devices: BJTs, IGBTs, and GTOs

2. High-Voltage n-Channel IGBTs on Free-Standing 4H-SiC Epilayers

3. SiC Seeded Crystal Growth

4. Reducing Stacking Faults in Highly Doped N-Type 4H-SiC Crystal

5. Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition;Japanese Journal of Applied Physics;2023-10-01

2. Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC;Journal of Applied Physics;2023-09-15

3. Electrical Properties of Heavily Al-Doped 4H-SiC;Materials Science Forum;2023-07-21

4. Dislocations in 4H silicon carbide;Journal of Physics D: Applied Physics;2022-09-23

5. Compensation of p-type doping in Al-doped 4H-SiC;Journal of Applied Physics;2022-05-14

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