Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Shallow acceptor levels in 4H- and 6H-SiC
2. Electrical Activity of Residual Boron in Silicon Carbide
3. 4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications
4. Future navy application of wide bandgap power semiconductor devices
5. Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)
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