Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique-Reference-Cited by-同舟云学术

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Sublimation growth and property characterization of p-type 4H-SiC by Al B co-doping technique

Published:2019-07 Issue: Volume:167 Page:76-80
ISSN:1359-6462
Container-title:Scripta Materialia
language:en
Short-container-title:Scripta Materialia

Author:

Xie Xuejian^ORCID,Sun Li,Chen Xiufang,Yang Xianglong,Hu Xiaobo,Xu Xiangang

Funder

National Key Research and Development Program of China

Natural Science Foundation of China

Fundamental Research Fund of Shandong University

Shandong Province Key Research and Development Program of China

Publisher

Elsevier BV

Subject

Condensed Matter Physics,General Materials Science,Mechanics of Materials,Metals and Alloys,Mechanical Engineering

Reference39 articles.

1. Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution

2. Material science and device physics in SiC technology for high-voltage power devices

3. Growth of thick p-type SiC epitaxial layers by halide chemical vapor deposition

4. Review of Silicon Carbide Power Devices and Their Applications

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In-situ and ex-situ characterizations of PVT-grown 4H-SiC single crystals;Journal of Physics D: Applied Physics;2024-09-03

2. Wafer-Scale p-Type SiC Single Crystals with High Crystalline Quality;Crystal Growth & Design;2024-06-19

3. Impurities in 4H silicon carbide: Site preference, lattice distortion, solubility, and charge transition levels;Journal of Applied Physics;2024-05-17

4. In Situ TEM Characterization and Modulation for Phase Engineering of Nanomaterials;Chemical Reviews;2023-12-06

5. Determination of Work Function for p- and n-Type 4H-SiC Single Crystals via Scanning Kelvin Probe Force Microscopy;Chinese Physics Letters;2023-12-01

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