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4H–SiC p–n diodes and gate turnoff thyristors for high-power, high-temperature applications

  • Published:2000-02 Issue:2 Volume:44 Page:303-308
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Agarwal Anant K,Seshadri Suresh,MacMillan Michael,Mani Sita S,Casady Jeffrey,Sanger Phillip,Shah Pankaj

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. SiC Electronics;Agarwal,1996

2. Study of bulk and elementary screw dislocation assisted reverse breakdown in low-voltage (<250 V) 4H–SiC p+n junction diodes. I. DC properties;Neudeck;IEEE Transactions on Electron Devices,1999

3. A comparative study of C plus Al co-implantation and Al implantation in 4H- and 6H–SiC;Tone;IEEE Transactions on Electron Devices,1999

4. US Patent No. 5,614,737, MOS-controlled high-power thyristor, March 25, 1997.

5. Temperature dependence of Fowler-Nordheim current in 6H- and 4H–SiC MOS capacitors;Agarwal;IEEE Electron Device Letters,1997

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