Author:
Zhang Qingchun Jon,Agarwal Anant K.
Funder
Air Force Research Laboratory, Dayton, Ohio
Army Research Laboratory, Adelphi, Maryland
Office of Naval Research
DARPA
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference47 articles.
1. S. E. Saddow A. Agarwal Advances in Silicon Carbide Processing and Applications (Artech House, 2004), p. 177.
2. SiC Power Switching Devices - the Second Electronics Revolution;Cooper;Proc. IEEE,2002
3. 1800 V NPN Bipolar Junction Transistors in 4H-SiC;Ryu;IEEE Electron Device Lett.,2001
4. A High Current Gain 4H-SiC NPN Power Bipolar Junction Transistor;Zhang;IEEE Electron Device Lett.,2003
5. High Current Gain 4H-SiC NPN Bipolar Junction Transistors;Huang;IEEE Electron Device Lett.,2003
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