Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure
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Published:2024-02-17
Issue:4
Volume:13
Page:786
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ISSN:2079-9292
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Container-title:Electronics
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language:en
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Short-container-title:Electronics
Author:
Wu Chengcheng1, Li Juntao12, Li Zhiqiang12, Zhang Lin12, Zhou Kun12, Deng Xiaochuan3ORCID
Affiliation:
1. Institute of Electronics Engineering, China Academy of Engineering Physics, Mianyang 621900, China 2. Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China 3. School of Integrated Circuits Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China
Abstract
In this study, a novel integrated 4H-SiC reverse-conducting gate turn-off thyristor (GTO) featuring an N-type floating (NF) structure is proposed. The proposed NF-structured 4H-SiC GTO outperforms conventional reverse-conducting GTOs in forward conduction, effectively eliminating the snapback phenomenon. This is achieved by increasing lateral resistance above the P-injector and modifying the electron current path during early turn-on. NF structures with a doping concentration of 2 × 1014 cm−3 and thicknesses exceeding 4 μm have been indicated to successfully eliminate the snapback phenomenon. Moreover, the anode-shorted structure enhances the GTO’s breakdown voltage and concurrently reduces turn-off losses by 85% at low current densities.
Funder
National Natural Science Foundation of China
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