Development of high-voltage SiC Power Electronic Devices-Reference-Cited by-同舟云学术

Development of high-voltage SiC Power Electronic Devices

Published:2021-12-06 Issue: Volume: Page:
ISSN:
Container-title:2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS)
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Author:

Sang Ling,Zhang Wenting,An Yunlai,Wang Liang,Chen Yanfang,Li Jialin,Du Yujie,Liu Rui,Niu Xiping,Yang Xiaolei,Li Shiyan,Chen Gang,Tang Xinling,Wu Junmin,Yang Fei

Funder

National Key Research and Development Program of China

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9675142/9675144/09675164.pdf?arnumber=9675164

Reference26 articles.

1. 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs

2. Ultra high voltage MOS controlled 4H-SiC power switching devices

3. 6.5 kV,25 A 4H- SiC Power DMOSFET [J];shiyan;Research & Progress of Solid State Electronics,2019

4. Concept and design of super junction devices

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1. SiC MOSFET Full Junction Temperature Estimation Modeling Method Based on Data Driving;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17

2. Simulation Study of 4H-SiC Low Turn-Off Loss and Snapback-Free Reverse-Conducting Gate Turn-Off Thyristor with N-Float Structure;Electronics;2024-02-17

3. Selection of HV SiC MOSFET Modules for MV-CHB for Distribution System Applications;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

4. Optimal Medium-Voltage Cascaded H-Bridge Converters for High-Power Distribution System Applications;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023