Ultra high voltage MOS controlled 4H-SiC power switching devices-Reference-Cited by-同舟云学术

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Ultra high voltage MOS controlled 4H-SiC power switching devices

Published:2015-07-28 Issue:8 Volume:30 Page:084001
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ryu S,Capell C,Van Brunt E,Jonas C,O’Loughlin M,Clayton J,Lam K,Pala V,Hull B,Lemma Y,Lichtenwalner D,Zhang Q J,Richmond J,Butler P,Grider D,Casady J,Allen S,Palmour J,Hinojosa M,Tipton C W,Scozzie C

Funder

US Army Research Laboratory

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0268-1242/30/i=8/a=084001/pdf

Reference14 articles.

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A 4H-SiC p-channel insulated gate bipolar transistor with higher breakdown voltage and superior V _F·C _res figure of merit;Japanese Journal of Applied Physics;2024-02-05

2. A 4H-SiC trench IGBT with controllable hole-extracting path for low loss;Chinese Physics B;2023-04-01

3. SiC and GaN Power Devices;More-than-Moore Devices and Integration for Semiconductors;2023

4. On-State Voltage Drop Analytical Model for 4H-SiC Trench IGBTs;Crystals;2022-04-22

5. Development of high-voltage SiC Power Electronic Devices;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

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