Author:
Liu Yanjuan,Jia Dezhen,Fang Junpeng
Abstract
In this paper, a model for the forward voltage drop in a 4H-SiC trench IGBT is developed. The analytical model is based on the 4H-SiC trench MOSFET voltage model and the hole-carrier concentration profile in the N-drift region for a conventional 4H-SiC trench IGBT. Moreover, an on-state voltage drop analytical model is validated using a 2D numerical simulation, and the simulation results demonstrate that there is good agreement between the ATLAS simulation data and analytic solutions.
Subject
Inorganic Chemistry,Condensed Matter Physics,General Materials Science,General Chemical Engineering
Cited by
1 articles.
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1. Gate Engineered IGBT with Improved Device Performance;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07