A high current gain 4H-SiC NPN power bipolar junction transistor-Reference-Cited by-同舟云学术

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A high current gain 4H-SiC NPN power bipolar junction transistor

Published:2003-05 Issue:5 Volume:24 Page:327-329
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Jianhui Zhang ,Luo Y.,Alexandrov P.,Fursin L.,Zhao J.H.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/27251/01210842.pdf?arnumber=1210842

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs;IEEE Open Journal of the Industrial Electronics Society;2022

2. Device Processing Chain and Processing SiC in a Foundry Environment;Wide Bandgap Semiconductors for Power Electronics;2021-10-29

3. Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor;IEEE Transactions on Electron Devices;2021-05

4. Effects of Parasitic Region in SiC Bipolar Junction Transistors on Forced Current Gain;Materials Science Forum;2018-06

5. SiC and GaN Power Semiconductor Devices;Power Electronics Handbook;2018

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