4H-SiC surface structure transitions during crystal growth following bunching in a fast sublimation process
Author:
Funder
European Regional Development Fund
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference16 articles.
1. Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
2. Step bunching behaviour on the {0001} surface of hexagonal SiC
3. Thermal etching of SiC
4. Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
5. Atomic and electronic structure of few-layer graphene on SiC(0001) studied with scanning tunneling microscopy and spectroscopy
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