Epitaxial growth of SiC with chlorinated precursors on different off-angle substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. Characterisation and Defects in Silicon Carbide
2. SiC power-switching devices-the second electronics revolution?
3. Very high growth rate of 4H-SiC epilayers using the chlorinated precursor methyltrichlorosilane (MTS)
4. Improved morphology for epitaxial growth on 4° off-axis 4H-SiC substrates
5. Thick homoepitaxial layers grown on on-axis Si-face 6H- and 4H-SiC substrates with HCl addition
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