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Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)

  • Published:2012-03 Issue:1 Volume:343 Page:133-137
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Buchholt K.,Eklund P.,Jensen J.,Lu J.,Ghandi R.,Domeij M.,Zetterling C.M.,Behan G.,Zhang H.,Lloyd Spetz A.,Hultman L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Oxidation kinetics of Ti3GeC2 MAX phase;Corrosion Science;2019-05

2. Synthesis and sintering of Ti3GeC2 MAX phase powders;Ceramics International;2018-01

3. Density Functional Theory Study of Mn+1AXn Phases: A Review;Critical Reviews in Solid State and Materials Sciences;2017-11-15

4. Experimental and DFT investigation of (Cr,Ti)3AlC2 MAX phases stability;Materials Research Letters;2016-09-22

5. Oxidation of Single Crystalline Ti2AlN Thin Films between 300 and 900 °C: A Perspective from Surface Analysis;The Journal of Physical Chemistry C;2016-08-11
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