Oxidation of Single Crystalline Ti2AlN Thin Films between 300 and 900 °C: A Perspective from Surface Analysis-Reference-Cited by-同舟云学术

Oxidation of Single Crystalline Ti2AlN Thin Films between 300 and 900 °C: A Perspective from Surface Analysis

Published:2016-08-11 Issue:33 Volume:120 Page:18520-18528
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Zhang Zheng¹,Chai Jianwei¹,Jin Hongmei²,Pan Jisheng¹,Wong Lai Mun¹,Lim Suo Hon¹,Sullivan Michael B.²,Wang Shi Jie¹

Affiliation:

1. Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), #08-03, 2 Fusionopolis Way, Innovis, 138634, Singapore

2. Institute of High Performance Computing, A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Connexis, 138632, Singapore

Funder

Science and Engineering Research Council, Agency for Science, Technology and Research

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.jpcc.6b02296

Reference47 articles.

1. The MN+1AXN phases: A new class of solids

2. The M+1AX phases: Materials science and thin-film processing

3. Nucleation and growth of Ti2AlN thin films deposited by reactive magnetron sputtering onto MgO(111)

4. Layered machinable ceramics for high temperature applications

5. Single-crystal Ti2AlN thin films

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