In situ monitoring of the stress evolution in growing group-III-nitride layers-Reference-Cited by-同舟云学术

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In situ monitoring of the stress evolution in growing group-III-nitride layers

Published:2005-02 Issue:1-2 Volume:275 Page:209-216
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Krost A.,Dadgar A.,Schulze F.,Bläsing J.,Strassburger G.,Clos R.,Diez A.,Veit P.,Hempel T.,Christen J.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference35 articles.

1. In situ Real-Time Characterization of Thin Films;Floro,2001

2. Physical Origins of Intrinsic Stresses in Volmer–Weber Thin Films

3. Stress evolution during metalorganic chemical vapor deposition of GaN

4. Fracture of AlxGa1-xN/GaN Heterostructure -- Compositional and Impurity Dependence --

5. GaN-based epitaxy on silicon: stress measurements

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1. Effect of layer structure of AlN interlayer on the strain in GaN layers during metal-organic vapor phase epitaxy on Si substrates;Journal of Applied Physics;2023-04-24

2. Mechanistic influence on uniformity of sheet resistance of AlGaN/GaN HEMT grown on Si substrate with the graded AlGaN buffer layers;Vacuum;2022-05

3. A review on GaN-based two-terminal devices grown on Si substrates;Journal of Alloys and Compounds;2021-07

4. Self-contained in-vacuum in situ thin film stress measurement tool;Review of Scientific Instruments;2018-05

5. Matching in-situ and ex-situ recorded stress gradients in an AlxGa1−xN Heterostructure: Complementary wafer curvature analyses in time and space;Scripta Materialia;2018-04

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