Influence of growth temperature and reactor pressure on microstructural and optical properties of InAlGaN quaternary epilayers
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference18 articles.
1. High optical quality AlInGaN by metalorganic chemical vapor deposition
2. Marked enhancement of 320–360 nm ultraviolet emission in quaternary InxAlyGa1−x−yN with In-segregation effect
3. Composition dependence of polarization fields in GaInN/GaN quantum wells
4. Study of the strain relaxation in InGaN/GaN multiple quantum well structures
5. Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
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1. Surface Evolution of Thick InGaN Epilayers with Growth Interruption Time;The Journal of Physical Chemistry C;2021-07-21
2. Growth of quaternary InAlGaN barrier with ultrathin thickness for HEMT application;Superlattices and Microstructures;2018-06
3. Structural and optical properties of Si-doped Al0.08In0.08Ga0.84N thin films grown on different substrates for optoelectronic devices;Superlattices and Microstructures;2016-07
4. Emission efficiency enhanced by reducing the concentration of residual carbon impurities in InGaN/GaN multiple quantum well light emitting diodes;Optics Express;2016-06-13
5. Investigation of indium gallium nitride facet-dependent nonpolar growth rates and composition for core–shell light-emitting diodes;Journal of Nanophotonics;2016-03-07
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