Study of the strain relaxation in InGaN/GaN multiple quantum well structures
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389330
Reference14 articles.
1. InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
2. Shortest wavelength semiconductor laser diode
3. Characterization of AlGaInN diode lasers with mirrors from chemically assisted ion beam etching
4. Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
5. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
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