Growth and characterization of ZnO film on Si(111) substrate by helicon wave plasma-assisted evaporation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference25 articles.
1. Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate
2. The doping process of p-type GaN films
3. A new method for a great reduction of dislocation density in a GaN layer grown on a sapphire substrate
4. Effect of buffer layer on the growth of GaN on Si substrate
5. Stress and its effect on optical properties of GaN epilayers grown on Si(111), 6H-SiC(0001), and c-plane sapphire
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1. Photoluminescence properties and random lasing behaviors of mist-CVD-grown ZnO disordered nanocrystals on c-plane sapphire substrate;Japanese Journal of Applied Physics;2021-09-07
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