ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2841667
Reference22 articles.
1. Thermodynamic stability of binary oxides in contact with silicon
2. ZnO growth on Si by radical source MBE
3. Epitaxial growth of ZnO films on Si substrates using an epitaxial GaN buffer
4. Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer
5. Properties of nitrogen-implanted p-type ZnO films grown on Si3N4/Si by radio-frequency magnetron sputtering
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