The doping process of p-type GaN films
Author:
Publisher
Elsevier BV
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference15 articles.
1. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
2. Deposition of highly resistive, undoped, andp‐type, magnesium‐doped gallium nitride films by modified gas source molecular beam epitaxy
3. p‐type zinc‐blende GaN on GaAs substrates
4. p‐type gallium nitride by reactive ion‐beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Zn doping on electronic structure and optical properties zincblende GaN (A DFT + U insight);Communications in Theoretical Physics;2021-02-04
2. High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing;Applied Physics Letters;2021-01-11
3. Electronic structure and optical properties of Al0.25Ga0.75N with point defects and Mg-defect complexes;Optical and Quantum Electronics;2018-01-17
4. Electrical properties of RF-sputtered Zn-doped GaN films and p -Zn-GaN/ n -Si hetero junction diode with low leakage current of 10 −9 A and a high rectification ratio above 10 5;Materials Science and Engineering: B;2017-08
5. Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering;Materials Science and Engineering: B;2015-03
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3