High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing-Reference-Cited by-同舟云学术

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

Published:2021-01-11 Issue:2 Volume:118 Page:022101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Breckenridge M. Hayden¹^ORCID,Tweedie James²,Reddy Pramod²^ORCID,Guan Yan¹,Bagheri Pegah¹^ORCID,Szymanski Dennis¹^ORCID,Mita Seiji²,Sierakowski Kacper³,Boćkowski Michał³^ORCID,Collazo Ramon¹,Sitar Zlatko¹²^ORCID

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

2. Adroit Materials, Inc., 2054 Kildaire Farm Rd., Cary, North Carolina 27518, USA

3. Institute of High-Pressure Physics, Polish Academy of Sciences, Sokołowska 29/37, 01-142 Warsaw, Poland

Funder

National Science Foundation

Air Force Office of Scientific Research

U.S. Department of Energy

Polish National Science Centre

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0038628

Reference26 articles.

1. The 2018 GaN power electronics roadmap

2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

3. CAVET on Bulk GaN Substrates Achieved With MBE-Regrown AlGaN/GaN Layers to Suppress Dispersion

4. Dynamic Modeling and Power Loss Analysis of High-Frequency Power Switches Based on GaN CAVET

5. An Investigation on Border Traps in III–V MOSFETs With an In0.53Ga0.47As Channel

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