Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering-Reference-Cited by-同舟云学术

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Electrical and structural properties of Mg-doped InxGa1−xN (x≤0.1) and p-InGaN/n-GaN junction diode made all by RF reactive sputtering

Published:2015-03 Issue: Volume:193 Page:13-19
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Kuo Dong-Hau,Tuan Thi Tran Anh,Li Cheng-Che,Yen Wei-Chun

Funder

Ministry of Science and Technology

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference27 articles.

1. Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin films

2. Nitride-Based Green Light-Emitting Diodes With Various p-Type Layers

3. Nitride-based LEDs with p-InGaN capping layer

4. Mg-doped InN and InGaN – Photoluminescence, capacitance–voltage and thermopower measurements

5. The doping process of p-type GaN films

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1. Numerical Study of a Solar Cell to Achieve the Highest InGaN Power Conversion Efficiency for the Whole In-Content Range;Micromachines;2022-10-26

2. Enhanced luminescence property of GaN-based LEDs with p-InGaN cap layer grown on p-GaN surface;Materials Science in Semiconductor Processing;2022-08

3. Fully Sputtered n–AlInGaN/p–Mg-InxGa1−xN (x ≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range;Journal of Electronic Materials;2022-01-07

4. Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD;Materials;2021-09-16

5. The Effect of RF Sputtering Temperature Conditions on the Structural and Physical Properties of Grown SbGaN Thin Film;Coatings;2021-06-23

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