Deposition of highly resistive, undoped, andp‐type, magnesium‐doped gallium nitride films by modified gas source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109816
Reference17 articles.
1. Violet luminescence of Mg‐doped GaN
2. Luminescence in GaN
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4. III-V nitrides for electronic and optoelectronic applications
5. Prospects for device implementation of wide band gap semiconductors
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