p‐type zinc‐blende GaN on GaAs substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.109848
Reference8 articles.
1. GaN, AlN, and InN: A review
2. On the origin of free carriers in high-conducting n-GaN
3. In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
5. GaN Growth Using GaN Buffer Layer
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