Indium segregation during multilayer InAs/GaAs(001) quantum dot formation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C
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4. Competition between strain-induced and temperature-controlled nucleation of InAs/GaAs quantum dots
5. Strain-interactions between InAs/GaAs quantum dot layers
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