Study of surface roughness using spectral reflectance measurements recorded during the MOVPE of InAs/GaAs heterostructures
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference31 articles.
1. Resonant enhancement of impact in Ga1−xAlxSb
2. GaSb booster cells for over 30% efficient solar‐cell stacks
3. Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor
4. Microstructure of lateral epitaxial overgrown InAs on (100) GaAs substrates
5. Laser reflectometry in situ monitoring of InGaAs grown by atmospheric pressure metalorganic vapour phase epitaxy
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1. In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process;Applied Surface Science;2024-04
2. Transfer matrix based reverse engineering approach to analyse annealing induced changes in optical transmission of TiO2/Ag/TiO2/Ag multilayer;Optics & Laser Technology;2021-12
3. Geometrical consideration for mechanical contact between rolling circle and surface roughness as an improvement to the surface profile;Journal of Mechanical Engineering and Sciences;2021-03-15
4. Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD;Journal of Crystal Growth;2020-11
5. In-situ observation of nucleation and property evolution in films grown with an atmospheric pressure spatial atomic layer deposition system;Nano Express;2020-06-01
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