Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference73 articles.
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5. Bismuth containing III–V quaternary alloy InGaAsBi grown by MBE;Feng;Phys. Status Solidi A,2006
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