Growth of dilute BGaP alloys by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
1. Control of structural defects in group III V N alloys grown on Si
2. Growth of low defect density GaP layers on Si substrates within the critical thickness by optimized shutter sequence and post-growth annealing
3. Lattice relaxation process and crystallographic tilt in GaP layers grown on misoriented Si(001) substrates by metalorganic vapor phase epitaxy
4. MOVPE growth conditions of the novel direct band gap, diluted nitride Ga(NAsP) material system pseudomorphically strained on GaP-substrate
5. MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy;Applied Physics Letters;2020-09-21
2. Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials;physica status solidi (b);2019-11-07
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