MBE growth of GaAsN/GaP(N) quantum wells with abrupt heterointerfaces for photonics applications on Si substrates
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference32 articles.
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1. Structural, optical and electrical characterization of dilute nitride GaP1−x−yAsyNx structures grown on Si and GaP substrates;Journal of Materials Science: Materials in Electronics;2017-10-25
2. Electrical Properties of Dilute Nitride GaAsPN/GaPN MQW p–i–n Diode;Journal of Electronic Materials;2017-03-27
3. Effect of Temperature on Segregation Coefficients of Impurities in Phosphorus;Chinese Journal of Chemical Engineering;2014-03
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