Chemical Vapor Deposition of Boron‐Incorporated Graphitic Carbon Nitride Film for Carbon‐Based Wide Bandgap Semiconductor Materials
Author:
Affiliation:
1. Department of Electrical and Computer EngineeringFaculty of EngineeringShinshu University 4-17-1 Wakasato Nagano 380-8553 Japan
2. Institute of Carbon Science and TechnologyShinshu University 4-17-1 Wakasato Nagano 380-8553 Japan
Funder
Japan Society for the Promotion of Science
Murata Science Foundation
Shinshu University
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.201900375
Reference36 articles.
1. Atomic layers of hybridized boron nitride and graphene domains
2. Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor
3. Graphene-like Boron–Carbon–Nitrogen Monolayers
4. Toward Single-Layer Uniform Hexagonal Boron Nitride–Graphene Patchworks with Zigzag Linking Edges
5. Layer-structured hexagonal (BN)C semiconductor alloys with tunable optical and electrical properties
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