Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor-Reference-Cited by-同舟云学术

Epitaxial Growth of a Single-Crystal Hybridized Boron Nitride and Graphene Layer on a Wide-Band Gap Semiconductor

Published:2015-05-22 Issue:21 Volume:137 Page:6897-6905
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Shin Ha-Chul¹,Jang Yamujin²,Kim Tae-Hoon²,Lee Jun-Hae¹,Oh Dong-Hwa¹,Ahn Sung Joon¹,Lee Jae Hyun³,Moon Youngkwon¹,Park Ji-Hoon¹,Yoo Sung Jong⁴,Park Chong-Yun¹,Whang Dongmok²³,Yang Cheol-Woong²,Ahn Joung Real¹³

Affiliation:

1. Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea

2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Republic of Korea

3. SAINT, Sungkyunkwan University, Suwon 440-746, Republic of Korea

4. Fuel Cell Research Center, Korea Institute of Science and Technology (KIST), Seoul 136-791, Republic of Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/jacs.5b03151

Reference51 articles.

1. The rise of graphene

2. Graphene-Like Two-Dimensional Materials

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4. Flexible and Transparent MoS2 Field-Effect Transistors on Hexagonal Boron Nitride-Graphene Heterostructures

5. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

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