SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen-Reference-Cited by-同舟云学术

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SiC seed polarity-dependent bulk AlN growth under the influence of residual oxygen

Published:2012-04 Issue:1 Volume:344 Page:19-26
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hartmann Carsten,Albrecht Martin,Wollweber Jürgen,Schuppang Josephine,Juda Uta,Guguschev Christo,Golka Sebastian,Dittmar Andrea,Fornari Roberto

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference31 articles.

1. Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules

2. Seeded growth of AlN on N- and Al-polar AlN seeds by physical vapor transport

3. Growth of high purity AlN crystals

4. Ain single crystals

5. Similarities and differences in sublimation growth of SiC and AlN

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Surface Control of AlN Single Crystal Growth on SiC Substrate;Crystal Growth & Design;2024-05-22

2. Comparative Study of AlN Crystals Grown on SiC Seeds with/without Voids at the Heterointerface;Crystal Growth & Design;2024-02-05

3. State-of-the-art and prospective progress of growing AlN substrates by physical vapor transport;Journal of Crystal Growth;2023-09

4. Morphology and crystalline property of an AlN single crystal grown on AlN seed;Journal of Semiconductors;2021-05-01

5. Comparison of the Thermal Stress Behavior of AlN Single Crystal Growth on AlN and SiC Seeds via the Physical Vapor Transport Method through Three-Dimensional Numerical Modeling and Simulation;Crystal Growth & Design;2021-04-02

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