Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Comparative study of GaN layers grown on insulating AlN and conductive AlGaN buffer layers
2. Surface morphology and strain of GaN layers grown using 6H-SiC(0001) substrates with different buffer layers
3. LPMOCVD growth of GaN on silicon carbide
4. Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE
5. Strain engineering of AlGaN-GaN HFETs grown on 3 inch 4H-SiC
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1. Characteristics study of heterojunction III-nitride/β-Ga2O3 nano-HEMT for THz applications;Engineering Research Express;2024-04-24
2. Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications;2023-07-11
3. Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness;Journal of Materials Science: Materials in Electronics;2023-06
4. Investigation of carrier gas on morphological and structural characteristics of AlGaN/GaN HEMT;Materials Research Bulletin;2022-09
5. Investigation and optimization of AlN nucleation layers grown on 4H-SiC by MOCVD;Materials Today: Proceedings;2021
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