The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference13 articles.
1. Recombination activity of contaminated dislocations in silicon: A model describing electron-beam-induced current contrast behavior
2. Generation Process of Dislocations in Precipitate-Containing Silicon Crystals
3. The generation of lattice dislocations by migrating boundaries
4. Dislocation behavior in heavily germanium-doped silicon crystal
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