Generation Process of Dislocations in Precipitate-Containing Silicon Crystals
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference20 articles.
1. Impurity clustering effects on dislocation generation in silicon
2. Lüders bands in deformed silicon crystals
3. Mechanical Behavior of Czochralski-Silicon Crystals as Affected by Precipitation and Dissolution of Oxygen Atoms
4. Characterization of structural defects in annealed silicon containing oxygen
5. Electrical and Optical Properties of Heat-Treated Silicon
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1. The impact of germanium doping on the dislocation distribution in directional solidified mc-silicon;Journal of Crystal Growth;2011-06
2. Dislocations Generated in Si Annealed under Normal or High Pressure;physica status solidi (a);1999-01
3. A Study of Behavior of Lattice Defects by means of HVEM In Situ Experiments and Real-Time X-ray Topography;Materials Transactions, JIM;1991
4. Relationship between mechanical and electrical properties in solarex semicrystalline silicon;Journal of Crystal Growth;1990-07
5. A High-Temperature X-Ray Lang Camera;Japanese Journal of Applied Physics;1985-03-20
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