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Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot

  • Published:2017-01 Issue: Volume:458 Page:66-71
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Sun Jifei,He Qiuxiang,Ban Boyuan,Bai Xiaolong,Li Jingwei,Chen Jian

Funder

National Natural Science Foundation of China

Anhui Provincial Natural Science Foundation

CPSF-CAS Joint Foundation for Excellent Postdoctoral Fellows

China Postdoctoral Science Foundation

100 Talent Program of Chinese Academy of Sciences

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference39 articles.

1. Iron and its complexes in silicon;Istratov;Appl. Phys. A Mater. Sci. Process.,1999

2. Iron contamination in silicon technology;Istratov;Appl. Phys. A Mater. Sci. Process.,2000

3. Effect of dissociation of iron–boron pairs in crystalline silicon on solar cell properties;Schmidt;Prog. Photovolt.: Res. Appl.,2005

4. Germanium-doped Czochralski silicon for photovoltaic applications;Wang;Sol. Energy Mater. Sol. Cells,2011

5. Oxygen precipitation in 10(20) cm(-3) germanium-doped Czochralski silicon;Dong;J. Appl. Phys.,2015

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