Oxygen precipitation in 1020 cm−3 germanium-doped Czochralski silicon-Reference-Cited by-同舟云学术

Oxygen precipitation in 1020 cm−3 germanium-doped Czochralski silicon

Published:2015-01-14 Issue:2 Volume:117 Page:025705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Dong Peng¹,Zhao Jian¹,Liang Xingbo²,Tian Daxi¹²,Yuan Shuai¹,Yu Xuegong¹,Ma Xiangyang¹,Yang Deren¹

Affiliation:

1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China

2. Ningbo QL Electronics Co., Ltd, Gangdong Road, Ningbo Free Trade Zone, Ningbo 315800, People's Republic of China

Funder

National Science and Technology Major Project

Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905584

Reference31 articles.

1. Basic aspects of impurity gettering

2. Mechanism of internal gettering of interstitial impurities in Czochralski-grown silicon

3. Gettering thresholds for transition metals by oxygen‐related defects in silicon

4. Vibrational modes and electronic properties of nitrogen defects in silicon

5. Bistable interstitial-carbon–substitutional-carbon pair in silicon

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1. Effect of Germanium Codoping on the Grown‐In Oxide Precipitates in Nitrogen‐Doped Czochralski Silicon;physica status solidi (a);2022-01-17

2. Comprehensive understanding on germanium-doping effects on oxygen precipitation in Czochralski silicon wafers with a prior rapid thermal anneal;Applied Physics A;2021-11

3. Formation kinetics and mechanism of metastable vacancy-dioxygen complex in neutron irradiated Czochralski silicon;Superlattices and Microstructures;2017-07

4. Effect of Sn doping on improvement of minority carrier lifetime of Fe contaminated p-type multi-crystalline Si ingot;Journal of Crystal Growth;2017-01

5. Impact of germanium co-doping on oxygen precipitation in heavily boron-doped Czochralski silicon;Superlattices and Microstructures;2016-11