Dislocation behavior in heavily germanium-doped silicon crystal-Reference-Cited by-同舟云学术

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Dislocation behavior in heavily germanium-doped silicon crystal

Published:2002-08 Issue:4-5 Volume:5 Page:409-412
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Taishi Toshinori,Huang Xinming,Yonenaga Ichiro,Hoshikawa Keigo

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference11 articles.

1. Growth of Silicon Crystals Free from Dislocations

2. Improvements on the Pedestal Method of Growing Silicon and Germanium Crystals

3. Dislocation-Free Czochralski Si Crystal Growth without the Dash-Necking Process: Growth from Undoped Si Melt

4. Dislocation-Free Czochralski Silicon Crystal Growth without Dash Necking

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1. Carbon-Isovalent Dopant Pairs in Silicon: A Density Functional Theory Study;Applied Sciences;2024-05-15

2. Spin modulates the electronic and magnetic properties of germanium-doped silicon with vacancies and charge states by first-principles calculation;Physica B: Condensed Matter;2023-11

3. Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen;Acta Physica Sinica;2021

4. Effects of co-doping nitrogen and germanium on dislocation gliding in Czochralski silicon: Implication for improving mechanical strength;Journal of Applied Physics;2020-12-21

5. Impact of germanium doping on the mechanical strength of low oxygen concentration Czochralski silicon wafers;Philosophical Magazine;2020-11-25

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